公开(公告)号：US11372590B2

公开(公告)日：2022-06-28

申请号：US17105521

申请日：2020-11-26

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chia-Hsiung Lai

IPC: G06F3/06

Abstract: A memory control method for a memory storage device is provided according to an exemplary embodiment of the disclosure. The method includes: reading first data from a first physical unit in response to a first read command from a host system; performing a first decoding operation on the first data to obtain decoded data corresponding to the first data; storing the decoded data corresponding to the first data in a buffer memory; reading second data from the first physical unit in response to a second read command from the host system; performing a second decoding operation on the second data; and in response to failure of the second decoding operation, searching the buffer memory for the decoded data corresponding to the first data to replace the reading of the second data.

公开(公告)号：US20220137877A1

公开(公告)日：2022-05-05

申请号：US17105521

申请日：2020-11-26

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chia-Hsiung Lai

IPC: G06F3/06

Abstract: A memory control method for a memory storage device is provided according to an exemplary embodiment of the disclosure. The method includes: reading first data from a first physical unit in response to a first read command from a host system; performing a first decoding operation on the first data to obtain decoded data corresponding to the first data; storing the decoded data corresponding to the first data in a buffer memory; reading second data from the first physical unit in response to a second read command from the host system; performing a second decoding operation on the second data; and in response to failure of the second decoding operation, searching the buffer memory for the decoded data corresponding to the first data to replace the reading of the second data.