公开(公告)号：US20200210093A1

公开(公告)日：2020-07-02

申请号：US16278172

申请日：2019-02-18

Applicant: PHISON ELECTRONICS CORP.

Inventor： Ping-Chuan Lin ,  Shii-Yeu Chern ,  Tai-Yuan Huang ,  Yi-Hsuan Lin ,  Chi-Shun Kao

IPC: G06F3/06

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: storing first data to a first physical erasing unit and marking the first physical erasing unit as belonging to a first group, wherein the first data belongs to a first type; storing second data to a second physical erasing unit and marking the second physical erasing unit as belonging to a second group, wherein the second data belongs to a second type which is different from the first type; selecting a third physical erasing unit as an active physical erasing unit and marking the third physical erasing unit as belonging to the first group; when a data moving operation is performed, moving valid data of the first physical erasing unit to the third physical erasing unit according to a first parameter of the first physical erasing unit.