公开(公告)号：US20200067267A1

公开(公告)日：2020-02-27

申请号：US16670833

申请日：2019-10-31

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Toru TAKAYAMA ,  Tohru NISHIKAWA ,  Tougo NAKATANI ,  Katsuya SAMONJI ,  Takashi KANO ,  Shinji UEDA

IPC分类号： H01S5/024 ,  H01S5/026 ,  H01S5/343 ,  H01S5/022 ,  H01S5/22

摘要： A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.