-
公开(公告)号:US20190250042A1
公开(公告)日:2019-08-15
申请号:US16391160
申请日:2019-04-22
Inventor: Naoki SHIMASAKI , Tokuhiko TAMAKI , Sanshiro SHISHIDO
IPC: G01J5/08 , H04N5/3745 , G01J1/04 , H04N5/357 , H01L27/146 , H04N5/33 , G01J1/42 , G01J3/36 , G01J5/20 , H04N3/14 , H04N5/232 , H04N5/378
CPC classification number: G01J5/0853 , G01J1/0407 , G01J1/42 , G01J3/36 , G01J5/0846 , G01J5/20 , H01L27/14609 , H01L27/14643 , H01L27/14665 , H01L27/14676 , H04N3/1512 , H04N5/23241 , H04N5/33 , H04N5/3575 , H04N5/3745 , H04N5/378
Abstract: An optical sensor including: a semiconductor layer including a source region and a drain region; a gate electrode facing a region between the source region and the drain region; a photoelectric conversion layer between the region and the gate electrode; and a first transistor having a first gate coupled to one of the source region and the drain region.
-
公开(公告)号:US20190238769A1
公开(公告)日:2019-08-01
申请号:US16383013
申请日:2019-04-12
Inventor: Naoki SHIMASAKI , Masashi MURAKAMI
IPC: H04N5/363 , H04N5/3745 , H04N5/378
CPC classification number: H04N5/363 , H04N5/37455 , H04N5/37457 , H04N5/378
Abstract: An imaging device includes a photoelectric converter that generates signal charge; a charge storage node that stores the signal charge; a capacitive element connected to the charge storage node; and a first transistor connected to the charge storage node via the capacitive element, wherein switching between on-state and off-state of the first transistor causes an amount of saturated charge in the charge storage node to change.
-