SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体存储器件及其制造方法

    公开(公告)号:US20160035976A1

    公开(公告)日:2016-02-04

    申请号:US14879625

    申请日:2015-10-09

    Abstract: Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a memory device of increased capacity, and a method of manufacturing the same. The semiconductor memory device in the present invention includes: a first contact plug formed inside a first contact hole penetrating through a first interlayer insulating layer; a lower electrode having a flat top surface and is thicker above the first interlayer insulating layer than above the first contact plug; a variable resistance layer; and an upper electrode. The lower electrode, the variable resistance layer, and the upper electrode compose a variable resistance element.

    Abstract translation: 提供一种可变电阻半导体存储器件,其改变其电阻而不受下层的影响,并且适合作为增加容量的存储器件及其制造方法。 本发明的半导体存储器件包括:形成在穿过第一层间绝缘层的第一接触孔内的第一接触插塞; 下电极,其具有平坦的顶表面,并且比所述第一接触插塞上方更厚于所述第一层间绝缘层之上; 可变电阻层; 和上电极。 下电极,可变电阻层和上电极构成可变电阻元件。

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