Abstract:
Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a memory device of increased capacity, and a method of manufacturing the same. The semiconductor memory device in the present invention includes: a first contact plug formed inside a first contact hole penetrating through a first interlayer insulating layer; a lower electrode having a flat top surface and is thicker above the first interlayer insulating layer than above the first contact plug; a variable resistance layer; and an upper electrode. The lower electrode, the variable resistance layer, and the upper electrode compose a variable resistance element.
Abstract:
Cognitive function evaluation device includes: storing unit storing reference data on the relationship between the periodicity of a body movement of a person walking and the cognitive function level of the person; acquiring unit that acquires body movement data on the detected body movement from body movement sensor that detects the body movement of subject walking; and calculating unit that calculates the periodicity of the body movement while walking from the acquired body movement data and checks the calculated periodicity against reference data stored in storing unit so as to identify the cognitive function level corresponding to the calculated periodicity.
Abstract:
A cognitive function evaluation device includes an acquisition unit that acquires body motion data representing a body motion of a person to be evaluated during walking; a calculation unit that calculates a displacement of a body of the person to be evaluated during walking based on the acquired body motion data; and an evaluation unit that evaluates a cognitive function of the person to be evaluated based on a frequency peak representing a cycle of walking of person-to-be-evaluated obtained by performing a frequency analysis on the calculated displacement, and to output the evaluation result.