公开(公告)号：US20020062692A1

公开(公告)日：2002-05-30

申请号：US09726257

申请日：2000-11-30

Applicant: Orbital Research Inc.

Inventor： Michael A. Huff ,  William L. Benard ,  Frederick J. Lisy ,  Troy S. Prince

IPC: G01L001/00 ,  G01B005/30 ,  G01F015/14

CPC classification number: F02C9/28 ,  F02D41/3005 ,  F23N5/022 ,  G01B5/30 ,  G01L1/005

Abstract: A method and sensor for detecting strain using shape memory alloys is disclosed. The sensor comprises a substrate material, a flexible diaphragm provided on the substrate material and a thin film SMA material deposited on the flexible diaphragm. The thin film SMA material is capable of undergoing a phase transformation in response to a physical stimulus being applied thereto. During such a phase transformation, a change occurs in the electrical resistance of the thin film SMA material. By measuring the value of the electrical resistance of the thin film SMA material immediately before and after the thin film SMA material undergoes a phase transformation, the difference in the value of the electrical resistance can be determined and utilized to determine the magnitude of the physical stimulus that was applied to the thin film SMA material causing it to undergo a phase transformation.

Abstract translation: 公开了一种使用形状记忆合金检测应变的方法和传感器。 传感器包括基底材料，设置在基底材料上的柔性隔膜和沉积在柔性隔膜上的薄膜SMA材料。 薄膜SMA材料能够响应于施加到其上的物理刺激而经历相变。 在这种相变期间，薄膜SMA材料的电阻发生变化。 通过在薄膜SMA材料经历相变之前和之后测量薄膜SMA材料的电阻值，可以确定和利用电阻值的差异来确定物理刺激的大小 其被应用于使其经历相变的薄膜SMA材料。