On-Line Memory Testing Systems And Methods
    1.
    发明申请
    On-Line Memory Testing Systems And Methods 有权
    在线记忆测试系统和方法

    公开(公告)号:US20140337669A1

    公开(公告)日:2014-11-13

    申请号:US13892019

    申请日:2013-05-10

    Abstract: A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory has a fault.

    Abstract translation: 一种用于在存储器使用期间测试电子存储器的方法包括:(a)在测试地址处检测对电子存储器的访问,(b)在寄存器子系统中保存在位置处写入电子存储器的写入数据 对应于测试地址,(c)将写入数据与在与测试地址相对应的位置处从电子存储器读取的数据进行比较,以确定存储器是否具有故障,以及(d)如果存储器具有 故障。

    On-line memory testing systems and methods
    2.
    发明授权
    On-line memory testing systems and methods 有权
    在线内存测试系统和方法

    公开(公告)号:US09202591B2

    公开(公告)日:2015-12-01

    申请号:US13892019

    申请日:2013-05-10

    Abstract: A method for testing an electronic memory while the memory is in use includes: (a) detecting an access to the electronic memory at a test address, (b) saving, in a register subsystem, write data written to the electronic memory at a location corresponding to the test address, (c) comparing the write data to data read from the electronic memory at the location corresponding to the test address to determine whether the memory has a fault, and (d) generating an error signal if the memory has a fault.

    Abstract translation: 一种用于在存储器使用期间测试电子存储器的方法包括:(a)在测试地址处检测对电子存储器的访问,(b)在寄存器子系统中保存在位置处写入电子存储器的写入数据 对应于测试地址,(c)将写入数据与在与测试地址相对应的位置处从电子存储器读取的数据进行比较,以确定存储器是否具有故障,以及(d)如果存储器具有 故障。

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