公开(公告)号：US11450784B2

公开(公告)日：2022-09-20

申请号：US16905330

申请日：2020-06-18

Applicant: Oki Data Corporation

Inventor： Hiroto Kawada ,  Kenichi Tanigawa ,  Shinya Jyumonji ,  Takuma Ishikawa ,  Chihiro Takahashi

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/30 ,  H01L27/15 ,  G03G15/04

Abstract: A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

公开(公告)号：US10991849B2

公开(公告)日：2021-04-27

申请号：US16601827

申请日：2019-10-15

Applicant: Oki Data Corporation

Inventor： Hiroto Kawada ,  Kenichi Tanigawa ,  Shinya Jyumonji ,  Takuma Ishikawa ,  Chihiro Takahashi

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/38 ,  H01L29/66

Abstract: A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.