公开(公告)号：US20150108426A1

公开(公告)日：2015-04-23

申请号：US14404444

申请日：2013-05-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Thomas Lehnhardt ,  Marcus Eichfelder ,  Jan-Philipp Ahl

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1-x4-y4N where 0≦x4≦0.40 and on average 0

Abstract translation: 在至少一个实施例中，该方法被设计成产生用于光电子半导体芯片的有源区，并且包括以下步骤：基于Al x 4 In y 4 Ga 1-x 4-y 4 N生长第四势垒层（24），其中0和nlE; x4和nlE; 0.40并且平均 0

公开(公告)号：US20200006594A1

公开(公告)日：2020-01-02

申请号：US16488540

申请日：2018-02-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Marcus Eichfelder

IPC: H01L33/14 ,  H01L31/0352 ,  H01L31/0304

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.

公开(公告)号：US11316067B2

公开(公告)日：2022-04-26

申请号：US16342163

申请日：2017-10-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Marcus Eichfelder ,  Alexander Walter

IPC: H01L33/02 ,  H01L31/0352 ,  H01L31/107 ,  H01L33/32 ,  H02S40/44 ,  H01L33/04 ,  H01L31/105 ,  H01L33/06

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes an n-doped region comprising a first layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their doping concentration, and wherein the first and second layers of each pair have the same material composition except for their doping and a second layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their material composition, an active region, wherein the second layer sequence is disposed between the first layer sequence and the active region and a p-doped region, wherein the active region is disposed between the n-doped region and the p-doped region.

公开(公告)号：US11018278B2

公开(公告)日：2021-05-25

申请号：US16488540

申请日：2018-02-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Marcus Eichfelder

IPC: H01L33/14 ,  H01L31/0352 ,  H01L31/0304 ,  H01L33/32

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.

公开(公告)号：US20190237615A1

公开(公告)日：2019-08-01

申请号：US16342163

申请日：2017-10-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Marcus Eichfelder ,  Alexander Walter

IPC: H01L33/02 ,  H01L31/0352 ,  H01L31/107 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/025 ,  H01L31/035236 ,  H01L31/035263 ,  H01L31/105 ,  H01L31/107 ,  H01L33/04 ,  H01L33/06 ,  H01L33/325 ,  H02S40/44

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes an n-doped region comprising a first layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their doping concentration, and wherein the first and second layers of each pair have the same material composition except for their doping and a second layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their material composition, an active region, wherein the second layer sequence is disposed between the first layer sequence and the active region and a p-doped region, wherein the active region is disposed between the n-doped region and the p-doped region.

公开(公告)号：US09502607B2

公开(公告)日：2016-11-22

申请号：US14404444

申请日：2013-05-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Thomas Lehnhardt ,  Marcus Eichfelder ,  Jan-Philipp Ahl

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1−x4−y4N where 0≦x4≦0.40 and on average 0

Abstract translation: 在至少一个实施例中，该方法被设计为产生光电子半导体芯片的有源区，并且包括以下步骤：基于Al x 4 In y 4 Ga 1-x 4-y 4 N生长第四势垒层（24），其中0≤x4≤0.40并且平均 0