公开(公告)号：US20210202842A1

公开(公告)日：2021-07-01

申请号：US17185901

申请日：2021-02-25

Applicant: Novaled GmbH

Inventor： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC: H01L51/00 ,  H01L51/50 ,  C07F9/53 ,  C07F9/6558 ,  C07F9/64 ,  C07F9/655 ,  C07F9/572 ,  C07F9/58 ,  H01L51/56

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

公开(公告)号：US20170301876A1

公开(公告)日：2017-10-19

申请号：US15516067

申请日：2015-09-30

Applicant: Novaled GmbH

Inventor： Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Bodo Wallikewitz

IPC: H01L51/50 ,  H01L51/00

Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.

公开(公告)号：US20240298524A1

公开(公告)日：2024-09-05

申请号：US18631712

申请日：2024-04-10

Applicant: Novaled GmbH

Inventor： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC: H10K85/60 ,  C07F9/53 ,  C07F9/572 ,  C07F9/58 ,  C07F9/64 ,  C07F9/655 ,  C07F9/6558 ,  C08K5/5397 ,  H10K50/165 ,  H10K59/32 ,  H10K71/00 ,  H10K71/30 ,  H10K102/00

CPC classification number: H10K85/60 ,  C07F9/5329 ,  C07F9/5728 ,  C07F9/58 ,  C07F9/64 ,  C07F9/65522 ,  C07F9/65527 ,  C07F9/65583 ,  H10K50/165 ,  H10K71/00 ,  H10K71/30 ,  H10K85/615 ,  C08K5/5397 ,  H10K59/32 ,  H10K2102/00

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

公开(公告)号：US10522778B2

公开(公告)日：2019-12-31

申请号：US15516067

申请日：2015-09-30

Applicant: Novaled GmbH

Inventor： Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Bodo Wallikewitz

IPC: H01L51/50 ,  H01L51/00

Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.

公开(公告)号：US20160322568A1

公开(公告)日：2016-11-03

申请号：US15107456

申请日：2014-12-23

Applicant: NOVALED GMBH

Inventor： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC: H01L51/00 ,  H01L51/56 ,  C07F9/53 ,  H01L51/50

CPC classification number: H01L51/005 ,  C07F9/5329 ,  C07F9/5728 ,  C07F9/58 ,  C07F9/64 ,  C07F9/65522 ,  C07F9/65527 ,  C07F9/65583 ,  C08K5/5397 ,  H01L27/3209 ,  H01L51/002 ,  H01L51/0052 ,  H01L51/5076 ,  H01L51/56 ,  H01L2251/301

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Abstract translation: 本发明涉及一种电掺杂半导体材料，其包含至少一种金属元素作为n掺杂剂和至少一种包含至少一种氧化膦基团的电子传输基质化合物，其制备方法和包含电掺杂 半导体材料。