公开(公告)号：US20230288196A1

公开(公告)日：2023-09-14

申请号：US18033324

申请日：2022-10-24

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  Wei Ti LEE ,  Laxmi WARAD ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James CHEN ,  Saurabh Singh

IPC: G01B15/02 ,  G01N23/2273

CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01B2210/56 ,  G01N2223/6116 ,  G01N2223/645 ,  H01L22/12

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

公开(公告)号：US20250052704A1

公开(公告)日：2025-02-13

申请号：US18809283

申请日：2024-08-19

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Wei Ti LEE ,  Heath POIS ,  Mark KLARE ,  Cornel BOZDOG

IPC: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  H01L21/66

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US20240401940A1

公开(公告)日：2024-12-05

申请号：US18668048

申请日：2024-05-17

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  Wei Ti LEE ,  Laxmi WARAD ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James CHEN ,  Saurabh Singh

IPC: G01B15/02 ,  G01N23/2273 ,  H01L21/66

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.