Abstract:
A method and apparatus for quantitatively measuring potential on surfaces with submicron spatial resolution employs conventional scanning electron microscope and electron energy analyzer to obtain potential measurements and, in effect, a map of potential at different points on a surface such as a semiconductor or integrated circuit device. A micrograph of the surface to be analyzed is employed to locate points at which potential is to be measured. An Auger electron spectrum including several Auger peaks characteristic of secondary electrons emitted from a point of known potential on which the electron beam of the microscope impinges is first obtained. Then either the potential on the surface at that point is changed or the electron beam is moved to a second point and a second Auger electron spectrum is obtained. The magnitude of the shift in corresponding Auger peaks from the first spectrum to the second spectrum constitutes a direct quantitative measure of the potential of the second point with respect to the potential of the first point.