公开(公告)号：US20180247871A1

公开(公告)日：2018-08-30

申请号：US15902756

申请日：2018-02-22

Applicant: NICHIA CORPORATION

Inventor： Naoto INOUE ,  Sho KUSAKA ,  Minoru YAMAMOTO ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L33/00

Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

公开(公告)号：US20240258170A1

公开(公告)日：2024-08-01

申请号：US18422925

申请日：2024-01-25

Applicant: NICHIA CORPORATION

Inventor： Minoru YAMAMOTO ,  Naoto INOUE ,  Masayuki IBARAKI ,  Hiroaki TAMEMOTO

IPC: H01L21/78 ,  H01L21/428

CPC classification number: H01L21/78 ,  H01L21/428

Abstract: A method of manufacturing a semiconductor element includes irradiating a laser beam on a wafer, which includes a sapphire substrate having a first face and a second face opposite the first face and a semiconductor structure disposed on the first face, from a second face side. The laser beam irradiated along a first direction parallel to the second face of the sapphire substrate is focused inside the sapphire substrate to thereby create a modified portion in the sapphire substrate along the first direction. The wafer is severed and separated into a number of semiconductor elements following the formation of a modified portion. In the step of forming a modified portion, the laser beam is focused closer to the second face than to the first face in a thickness direction of the sapphire substrate.

公开(公告)号：US20210036182A1

公开(公告)日：2021-02-04

申请号：US16945729

申请日：2020-07-31

Applicant: NICHIA CORPORATION

Inventor： Masayuki IBARAKI ,  Minoru YAMAMOTO ,  Naoto INOUE ,  Hiroaki TAMEMOTO

IPC: H01L33/00 ,  H01L33/20 ,  H01L25/075

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.