公开(公告)号：US11462382B2

公开(公告)日：2022-10-04

申请号：US17185085

申请日：2021-02-25

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Hsun-Po Wen ,  Sung-Hui Chen

IPC: H01J37/24 ,  H01J37/317 ,  H01J37/05 ,  H01J37/20 ,  H01J37/14

Abstract: The present disclosure provides a substrate-processing apparatus. The substrate-processing apparatus includes an ion implanter and a controller associated with the ion implanter. The ion implanter is configured to implant ions into a substrate using an ion beam. The controller is configured to monitor an initial implantation profile of the ion beam and tune the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and the desired implantation profile.