Quantum dot LED design based on resonant energy transfer

    公开(公告)号:US11121339B2

    公开(公告)日:2021-09-14

    申请号:US16406930

    申请日:2019-05-08

    申请人: Nanosys, Inc.

    IPC分类号: H01L51/50 H01L51/56

    摘要: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.