公开(公告)号：US20220267889A1

公开(公告)日：2022-08-25

申请号：US17596204

申请日：2020-10-26

Applicant: NANJING UNIVERSITY

Inventor： Xuecou TU ,  Mengxin LIU ,  Lin KANG ,  Labao ZHANG ,  Xiaoqing JIA ,  Qingyuan ZHAO ,  Jian CHEN ,  Peiheng WU

IPC: C23C14/16 ,  C23C14/30 ,  C23C14/02 ,  C23C14/58

Abstract: A fabrication method of a silicon nanoneedle array with ultra-high aspect ratio includes the following steps: spin-coating two photoresist layers of methyl methacrylate (MMA) and polymethyl methacrylate (PMMA) A2 on a silicon substrate; subjecting the silicon substrate coated with the two photoresist layers of MMA and PMMA A2 to electron beam lithography to form a photoresist pattern on the silicon substrate; subjecting the silicon substrate on which the photoresist pattern is formed to electron beam evaporation (EBE) to deposit an Al film layer on the silicon substrate; subjecting the silicon substrate on which the Al film layer is deposited to stripping to obtain an Al film array deposited on the silicon substrate, which provides a mask for the subsequent inductively coupled plasma (ICP) etching process; and subjecting the silicon substrate covered with the Al mask to ICP silicon etching to obtain a silicon nanoneedle array structure.