公开(公告)号：US20220231595A1

公开(公告)日：2022-07-21

申请号：US17613697

申请日：2019-05-29

申请人： Mitsubishi Electric Corporation

发明人： Yasushi NAKAYAMA ,  Yoshiko TAMADA ,  Takayoshi MIKI ,  Shota MORISAKI ,  Yukio NAKASHIMA ,  Kenta UCHIDA ,  Keisuke KIMURA ,  Tomonobu MIHARA

IPC分类号： H02M1/088 ,  H02M7/537

摘要： A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.