Image sensor formed by silicon rich oxide material
    1.
    发明授权
    Image sensor formed by silicon rich oxide material 有权
    由富硅氧化物材料形成的图像传感器

    公开(公告)号:US08330091B2

    公开(公告)日:2012-12-11

    申请号:US12561277

    申请日:2009-09-17

    申请人: Ming-Hung Chuang

    发明人: Ming-Hung Chuang

    IPC分类号: H01J40/14 H01L27/00

    摘要: An image sensor includes a light-sensing element, a first transistor, and a second transistor. The light-sensing element has a first end and a second end electrically connected to a select line. The first transistor has a first end electrically connected to a first control line, a control end electrically connected to the first end, and a second end electrically connected to the first end of the light-sensing element. The second transistor has a first end electrically connected to a voltage source, a control end electrically connected to the first end of the light-sensing element, and a second end electrically connected to an output line. The light-sensing element uses the material of silicon rich oxide so that the light-sensing element can sense the luminance variance and have the characteristic of the capacitor for the level boost.

    摘要翻译: 图像传感器包括光感测元件,第一晶体管和第二晶体管。 光感测元件具有电连接到选择线的第一端和第二端。 第一晶体管具有电连接到第一控制线的第一端,与第一端电连接的控制端,以及电连接到光感测元件的第一端的第二端。 第二晶体管具有电连接到电压源的第一端,与光感测元件的第一端电连接的控制端,以及电连接到输出线的第二端。 感光元件使用富硅氧化物的材料,使得感光元件可以感测亮度方差,并具有用于电平提升的电容器的特性。

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 有权
    图像传感器

    公开(公告)号:US20110012009A1

    公开(公告)日:2011-01-20

    申请号:US12561277

    申请日:2009-09-17

    申请人: Ming-Hung Chuang

    发明人: Ming-Hung Chuang

    IPC分类号: H01L31/113 H01J40/00

    摘要: An image sensor includes a light-sensing element, a first transistor, and a second transistor. The light-sensing element has a first end and a second end electrically connected to a select line. The first transistor has a first end electrically connected to a first control line, a control end electrically connected to the first end, and a second end electrically connected to the first end of the light-sensing element. The second transistor has a first end electrically connected to a voltage source, a control end electrically connected to the first end of the light-sensing element, and a second end electrically connected to an output line. The light-sensing element uses the material of silicon rich oxide so that the light-sensing element can sense the luminance variance and have the characteristic of the capacitor for the level boost.

    摘要翻译: 图像传感器包括光感测元件,第一晶体管和第二晶体管。 光感测元件具有电连接到选择线的第一端和第二端。 第一晶体管具有电连接到第一控制线的第一端,与第一端电连接的控制端,以及电连接到光感测元件的第一端的第二端。 第二晶体管具有电连接到电压源的第一端,与光感测元件的第一端电连接的控制端,以及电连接到输出线的第二端。 感光元件使用富硅氧化物的材料,使得感光元件可以感测亮度方差,并具有用于电平提升的电容器的特性。

    Active pixel sensor circuit
    3.
    发明授权
    Active pixel sensor circuit 有权
    有源像素传感器电路

    公开(公告)号:US08115846B2

    公开(公告)日:2012-02-14

    申请号:US12252039

    申请日:2008-10-15

    IPC分类号: H04N5/335 H04N5/217

    CPC分类号: H04N5/374

    摘要: The present invention relates to an active pixel sensor circuit and a method of operating same. In one embodiment, the active pixel sensor circuit includes a reset transistor having a gate, a source and a drain, a silicon rich oxide (SRO) photosensor having an anode and a cathode electrically coupled to the source of the reset transistor, and a readout transistor having a gate electrically coupled to the cathode of the SRO photosensor, a source and a drain.

    摘要翻译: 本发明涉及一种有源像素传感器电路及其操作方法。 在一个实施例中,有源像素传感器电路包括具有栅极,源极和漏极的复原晶体管,具有电耦合到复位晶体管的源极的阳极和阴极的富硅氧化物(SRO)光电传感器,以及读出 晶体管具有电耦合到SRO光电传感器的阴极的栅极,源极和漏极。