Determining overlay of features of a memory array

    公开(公告)号:US11094643B2

    公开(公告)日:2021-08-17

    申请号:US16372950

    申请日:2019-04-02

    摘要: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.

    DETERMINING OVERLAY OF FEATURES OF A MEMORY ARRAY

    公开(公告)号:US20200321283A1

    公开(公告)日:2020-10-08

    申请号:US16372950

    申请日:2019-04-02

    摘要: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.