公开(公告)号：US20020093278A1

公开(公告)日：2002-07-18

申请号：US10071440

申请日：2002-02-08

Applicant: Micron Technology, Inc.

Inventor： David H. Wells ,  Ji Ung Lee ,  Aaron R. Wilson

IPC: H01J001/02 ,  H01J001/00 ,  H01L021/00 ,  H01J009/12 ,  H01J009/14 ,  H01J009/04

CPC classification number: H01J29/467 ,  H01J9/025 ,  H01J2329/00

Abstract: A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (nulltopographic selectivitynull) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid. Accordingly, such formation of the extraction grid is self-aligned to its associated emitter tip structures.

Abstract translation: 描述了一种形成场发射器尖端结构的提取栅格的方法。 导电层沉积在形成在场致发射极尖端结构之上的绝缘层上。 使用离子铣削铣削导电层。 由于沿着导电层的暴露表面的形貌差异，离子以不同的入射角度撞击暴露的表面。 由于来自离子研磨的蚀刻速率至少部分地取决于入射角，基于暴露表面的变化的形貌的选择性（“地形选择性”）导致其材料的非均匀去除。 特别地，与发射极尖端结构之间的导电层的部分相比，导电层在场发射极尖端结构附近的部分被去除得更快。 因此，靠近场发射极尖端结构的绝缘层的部分可以暴露，同时留下用于形成提取栅格的导电层的中间部分。 因此，提取栅格的这种形成与其相关联的发射极尖端结构自对准。