摘要:
The present invention provides a chemically amplified positive resist composition comprising (A) a resin obtainable by reacting a novolak resin, a poly(hydroxystyrene) and a compound having at least two vinyl ether structures, and (B) an acid generator.
摘要:
A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): (ii) a polymerization unit represented by the formula (II): and (iii) at least one polymerization unit selected from the group consisting of a polymerization unit represented by the formula (III): and a polymerization unit represented by the formula (IV): and (B) at least one acid generator.
摘要:
The present invention provides a chemically amplified positive resist composition comprising (A) a resin obtainable by reacting a novolak resin, a poly(hydroxystyrene) and a compound having at least two vinyl ether structures, and (B) an acid generator.
摘要:
A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): (ii) a polymerization unit represented by the formula (II): and (iii) at least one polymerization unit selected from the group consisting of a polymerization unit represented by the formula (III): and a polymerization unit represented by the formula (IV): and (B) at least one acid generator.
摘要:
A negative type resist composition is provided, which provides excellent resolution, satisfactory profile and outstanding process stability; is suitable for exposure using deep ultra violet ray; and comprises alkali soluble resin, acid generator, crosslinking agent, and a basic compound represented by the following formula (I) wherein, A represents sulfide group, disulfide group or bivalent aliphatic hydrocarbon residue which may be optionally interrupted by imino group, sulfide group, or disulfide group, X represents nitrogen atom or C(NH2), and R1 and R2 independently represent hydrogen or alkyl.
摘要:
A polymer having an O-substituted vinylphenol unit represented by the following formula (I) wherein R1, R2 and R3 represent an alkyl; or R1 and R2, R1 and R3 or R2 and R3 are bound together and respectively form an alkylene; or R2 is methylidyne wherein one bond in the methylidyne is bound to R1, the other bond is bound to R3, and R1 and R3 represent alkylene, and a resist composition comprising the polymer are provided.
摘要:
The present invention provides a salt represented by the formula (I): wherein X represents a C3-C30 divalent group containing at least one divalent alicyclic hydrocarbon group, and at least one —CH2— in the C3-C30 divalent group may be substituted with —O— or —CO—, Y represents a C3-C30 cyclic hydrocarbon group which may be substituted with at least one group selected from a C1-C6 alkoxy group, a C1-C4 perfluoroalkyl group, a C1-C6 hydroxyalkyl group, a hydroxyl group and a cyano group, and at least one —CH2— in the C3-C30 cyclic hydrocarbon group may be substituted with —O— or —CO—, Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, and A+ represents an organic counter ion.
摘要:
The present invention provides a positive resist composition comprising (A) at least one resin selected from the group consisting of {circle around (1)} resin which is itself insoluble or poorly soluble in an alkali aqueous solution but cause a chemical change by the action of an acid to become soluble in an alkali aqueous solution with a proviso that the resin is not novolak resin and {circle around (2)} alkali-soluble resin, (B) novolak resin containing protective group which can be dissociated by the action of an acid and (C) an acid generator.
摘要:
A resist composition showing excellent close adherence at the interface of a substrate and a resist, improving problems in wet etching, having excellent sensitivity and resolution, and also showing excellent resist performances, and comprising a compound of the general formula (I): wherein, R1 and R2 represent each independently a hydrogen atom or an alkyl group, R3 represents a hydrogen atom, alkyl group, aryl group, aralkyl group, alkenyl group, alkylcarbonyl group, arylcarbonyl group or aralkylcarbonyl group, n represents an integer of 1 to 40, m represents an integer of 1 to 5, and l represents an integer of 1 to 5, is provided.
摘要翻译:在基板和抗蚀剂的界面上显示优异的紧密附着性的抗蚀剂组合物,改善了湿蚀刻中的问题,灵敏度和分辨率优异,抗蚀性能优异,并且包含通式(I)的化合物:其中, R 1和R 2各自独立地表示氢原子或烷基,R 3表示氢原子,烷基,芳基,芳烷基,烯基,烷基羰基,芳基羰基或芳烷基羰基, n表示1〜40的整数,m表示1〜5的整数,l表示1〜5的整数。
摘要:
A developer preparing apparatus for obtaining a developer containing a developer component having a definite content by mixing an undiluted developer solution containing 5 to 40% by weight of tetramethylammonium hydroxide (TMAH) and pure water, and a developer preparing method for preparing the developer using the developer preparing apparatus. The developer preparing apparatus comprising a mixing bath equipped with a means for receiving and mixing an undiluted developer solution and pure water, an ultrasonic densitometer for measuring the developer component contained in the developer in the mixing bath, a flow rate controlling means for controlling the supplying flow rate of the undiluted developer solution and/or pure water into the mixing bath by the output signal from the ultrasonic densitometer, and a storage tank for receiving and storing the developer containing the developer component having the definite content in the mixing bath.