公开(公告)号：US11063073B2

公开(公告)日：2021-07-13

申请号：US16487945

申请日：2018-02-23

申请人： Massachusetts Institute of Technology

发明人： Kyusang Lee ,  Jeehwan Kim

IPC分类号： H01L27/146 ,  B32B37/26 ,  B32B38/18 ,  H01L21/683 ,  H01L31/0224 ,  H01L31/18

摘要： A method of fabricating a curved focal plane array (FPA) includes forming an epitaxial layer including a semiconductor on a release layer. The release layer includes a two-dimensional (2D) material and is disposed on a first substrate. The method also includes forming a metal layer on the epitaxial layer and transferring the epitaxial layer and the metal layer to a second substrate including an elastomer. The method also includes fabricating a plurality of photodetectors from the epitaxial layer and bending the second substrate to form the curved FPA.

公开(公告)号：US10952642B2

公开(公告)日：2021-03-23

申请号：US15808416

申请日：2017-11-09

申请人： AMOREPACIFIC CORPORATION ,  MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Jiyeon Han ,  Han-Wool Yeon ,  Eunjoo Kim ,  Jeehwan Kim ,  Kyusang Lee ,  Haekwang Lee

IPC分类号： A61B5/00 ,  A61B5/103 ,  H01L27/20 ,  H01L41/08 ,  H01L41/047 ,  H01L41/053 ,  H01L41/113 ,  H01L41/312

摘要： A strain sensor unit and a skin sensor module comprising the same are provided. The strain sensor unit according to an embodiment of the present disclosure includes a substrate having a through-hole, and including a first electrode and a second electrode formed at one side and the other side of the through-hole on one surface of the substrate, a piezoelectric device drawn from the first electrode and extending inward the through-hole, and a piezoresistor drawn from the second electrode and extending inward the through-hole, wherein the piezoresistor overlaps with a whole or part of the piezoelectric device.

公开(公告)号：US20190386044A1

公开(公告)日：2019-12-19

申请号：US16487945

申请日：2018-02-23

申请人： Massachusetts Institute of Technology

发明人： Kyusang Lee ,  Jeehwan Kim

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L31/18 ,  H01L21/683 ,  B32B37/26 ,  B32B38/18

摘要： A method of fabricating a curved focal plane array (FPA) includes forming an epitaxial layer including a semiconductor on a release layer. The release layer includes a two-dimensional (2D) material and is disposed on a first substrate. The method also includes forming a metal layer on the epitaxial layer and transferring the epitaxial layer and the metal layer to a second substrate including an elastomer. The method also includes fabricating a plurality of photodetectors from the epitaxial layer and bending the second substrate to form the curved FPA.

公开(公告)号：US20190275320A1

公开(公告)日：2019-09-12

申请号：US16348128

申请日：2017-11-08

申请人： Massachusetts Institute of Technology

发明人： Jeehwan Kim ,  Kyusang Lee ,  Yunjo Kim ,  Kwangyong Jung

IPC分类号： A61N1/32 ,  A45D44/00 ,  A61N1/30 ,  A61B5/00 ,  A61N1/04 ,  A61N1/06

摘要： A method of facial treatment of a user while wearing a treatment system is disclosed. The treatment system includes a flexible film and circuitry disposed on or within the flexible film. The method includes conformally disposing the flexible film over a face of the user and applying a radio frequency (RF) wave, generated by the circuitry, on skin of the face. The method eliminates the need for a user (or a third-party operator) to hold the device by hand. In addition, the thin film can be configured as a face mask allowing treatment over a large area of skin at any given time.

公开(公告)号：US20190259608A1

公开(公告)日：2019-08-22

申请号：US16348125

申请日：2017-11-08

申请人： Massachusetts Institute of Technology

发明人： Jeehwan Kim ,  Kyusang Lee

IPC分类号： H01L21/02 ,  H01L21/683 ,  H01L21/762

摘要： A method of manufacturing a semiconductor device includes forming a first epitaxial layer on a first substrate. The first substrate includes a first semiconductor material having a first lattice constant and the first epitaxial layer includes a second semiconductor material having a second lattice constant different from the first lattice constant. The method also includes disposing a graphene layer on the first epitaxial layer and forming a second epitaxial layer comprising the second semiconductor material on the graphene layer. This method can increase the substrate reusability, increase the release rate of functional layers, and realize precise control of release thickness.

公开(公告)号：US10903073B2

公开(公告)日：2021-01-26

申请号：US16348125

申请日：2017-11-08

申请人： Massachusetts Institute of Technology

发明人： Jeehwan Kim ,  Kyusang Lee

IPC分类号： H01L29/15 ,  H01L21/02 ,  H01L21/683 ,  H01L21/762

摘要： A method of manufacturing a semiconductor device includes forming a first epitaxial layer on a first substrate. The first substrate includes a first semiconductor material having a first lattice constant and the first epitaxial layer includes a second semiconductor material having a second lattice constant different from the first lattice constant. The method also includes disposing a graphene layer on the first epitaxial layer and forming a second epitaxial layer comprising the second semiconductor material on the graphene layer. This method can increase the substrate reusability, increase the release rate of functional layers, and realize precise control of release thickness.

公开(公告)号：US11076775B2

公开(公告)日：2021-08-03

申请号：US16372150

申请日：2019-04-01

申请人： AMOREPACIFIC CORPORATION ,  MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Jiyeon Han ,  Han-Wool Yeun ,  Eunjoo Kim ,  Jeehwan Kim ,  Kyusang Lee ,  Haekwang Lee

IPC分类号： A61B5/103 ,  A61B5/00 ,  H01L41/053 ,  H01L41/047 ,  H01L27/20 ,  H01L41/08 ,  H01L41/312 ,  H01L41/113

摘要： A strain sensor unit and a skin sensor module comprising the same are provided. The strain sensor unit according to an embodiment of the present disclosure includes a substrate having a through-hole, and including a first electrode and a second electrode formed at one side and the other side of the through-hole on one surface of the substrate, a piezoelectric device drawn from the first electrode and extending inward the through-hole, and a piezoresistor drawn from the second electrode and extending inward the through-hole, wherein the piezoresistor overlaps with a whole or part of the piezoelectric device.

公开(公告)号：US20200043790A1

公开(公告)日：2020-02-06

申请号：US16605897

申请日：2018-04-18

申请人： Massachusetts Institute of Technology

发明人： Kyusang Lee ,  Jeehwan Kim

IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/306

摘要： A method of manufacturing a semiconductor device includes forming a release layer on a first substrate and the release layer includes a planar organic molecule. The method also includes forming a single-crystalline film on the release layer and transferring the single-crystalline film from the release layer to a second substrate.

公开(公告)号：US10517155B2

公开(公告)日：2019-12-24

申请号：US16156250

申请日：2018-10-10

申请人： Massachusetts Institute of Technology

发明人： Kyusang Lee ,  Wei Kong ,  Jeehwan Kim

IPC分类号： H01L33/08 ,  H05B33/08 ,  H01L33/36 ,  C01B32/188 ,  H01L27/15 ,  B32B38/10 ,  H01L33/44 ,  H01L27/30 ,  H01L25/075 ,  H01L33/00

摘要： A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.