公开(公告)号：US20140133248A1

公开(公告)日：2014-05-15

申请号：US14159803

申请日：2014-01-21

Applicant: MediaTek Inc.

Inventor： Hsiang-I HUANG

IPC: G11C11/409

CPC classification number: G11C11/409 ,  G11C7/1066 ,  G11C29/028 ,  G11C29/50012

Abstract: An embodiment of the invention provides a memory controller for controlling a memory. The memory controller comprises a pulse width modulation module, a voltage comparator and a duty cycle calibration device. The pulse width modulation module is suitable for receiving a clock signal to generate a first voltage. The voltage comparator is suitable for receiving and comparing a reference voltage with the first voltage to output a comparison signal. The duty cycle calibration device is suitable for adjusting a duty cycle of the clock signal according to the comparison signal.

Abstract translation: 本发明的实施例提供了一种用于控制存储器的存储器控​​制器。 存储器控制器包括脉宽调制模块，电压比较器和占空比校准装置。 脉冲宽度调制模块适于接收时钟信号以产生第一电压。 电压比较器适于接收和比较参考电压与第一电压以输出比较信号。 占空比校准装置适用于根据比较信号调整时钟信号的占空比。

公开(公告)号：US20190074051A1

公开(公告)日：2019-03-07

申请号：US15995187

申请日：2018-06-01

Applicant: MEDIATEK INC.

Inventor： Chia-Fu CHANG ,  Hsiang-I HUANG ,  Bo-Wei HSIEH ,  Szu-Ying CHENG ,  Yu-Hsien TSAI

IPC: G11C11/406

Abstract: A refresh control method for a memory system is provided. The memory system includes a dynamic random access memory with a register set and a memory cell array. The refresh control method includes the following steps. Firstly, a masking command or an unmasking command is issued, and thus the register set is updated. A first region of the memory cell array is set as a masked region according to the masking command. A second region of the memory cell array is set as an unmasked region according to the unmasking command. Then, a refresh command is issued to the dynamic random access memory. According to the refresh command, a refresh action is performed on the second region of the memory cell array.