High speed PIN diode driver circuit

    公开(公告)号:US10594312B2

    公开(公告)日:2020-03-17

    申请号:US16275968

    申请日:2019-02-14

    摘要: An apparatus includes a first circuit and a second circuit. The first circuit may be configured to inject charge into an I-region of a PIN diode in response to a first state of a control signal. The second circuit may be configured to remove charge from the I-region of the PIN diode in response to a second state of the control signal. A radio frequency switching time of the apparatus is generally about two orders of magnitude lower than a carrier lifetime of the PIN diode.

    HIGH SPEED PIN DIODE DRIVER CIRCUIT
    2.
    发明申请

    公开(公告)号:US20200021283A1

    公开(公告)日:2020-01-16

    申请号:US16275968

    申请日:2019-02-14

    摘要: An apparatus includes a first circuit and a second circuit. The first circuit may be configured to inject charge into an I-region of a PIN diode in response to a first state of a control signal. The second circuit may be configured to remove charge from the I-region of the PIN diode in response to a second state of the control signal. A radio frequency switching time of the apparatus is generally about two orders of magnitude lower than a carrier lifetime of the PIN diode.

    HIGH SPEED PIN DIODE DRIVER CIRCUIT
    3.
    发明申请

    公开(公告)号:US20180234086A1

    公开(公告)日:2018-08-16

    申请号:US15430994

    申请日:2017-02-13

    IPC分类号: H03K17/04

    摘要: An apparatus includes a first circuit and a second circuit. The first circuit may be configured to inject charge into an I-region of a PIN diode in response to a first state of a control signal. The second circuit may be configured to remove charge from the I-region of the PIN diode in response to a second state of the control signal. A radio frequency switching time of the apparatus is generally about two orders of magnitude lower than a carrier lifetime of the PIN diode.