公开(公告)号：US10199534B2

公开(公告)日：2019-02-05

申请号：US15557019

申请日：2016-03-11

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Oh Kang

IPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  F21V3/02 ,  F21V29/80 ,  F21K9/232 ,  F21K9/238 ,  F21K9/235 ,  F21K9/237 ,  F21Y115/10 ,  H01L33/48 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64

摘要： A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.

公开(公告)号：US20150280059A1

公开(公告)日：2015-10-01

申请号：US14433361

申请日：2013-10-02

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Oh Kang

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L33/14

CPC分类号： H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light-emitting device, according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a blocking layer on the active layer; and a second conductive semiconductor layer on the blocking layer, wherein the active layer comprises a plurality of quantum well layers and quantum barrier layers, and the quantum well layer is formed from InxGaYNInxGayN (0.11≦x≦0.14, 0

摘要翻译： 根据本发明的一个实施例的发光器件包括：第一导电半导体层; 在第一导电半导体层上的有源层; 活性层上的阻挡层; 以及在所述阻挡层上的第二导电半导体层，其中所述有源层包括多个量子阱层和量子势垒层，并且所述量子阱层由In x Ga y N In x Ga y N（0.11＆lt; x 1; x＆n l E; 0.14,0

公开(公告)号：US10546974B2

公开(公告)日：2020-01-28

申请号：US14908462

申请日：2014-07-18

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Oh Kang

IPC分类号： H01L33/32 ,  H01L33/06

摘要： Disclosed are a light-emitting device, a method of fabricating the same, a light-emitting device package, and a lighting system. The light-emitting device includes a first-conductivity-type semiconductor layer, an active layer disposed on the first-conductivity-type semiconductor layer and including a quantum well having a composition of InxGa1-xN (0

公开(公告)号：US09385270B2

公开(公告)日：2016-07-05

申请号：US14433361

申请日：2013-10-02

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Oh Kang

IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L33/14

CPC分类号： H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light-emitting device, according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a blocking layer on the active layer; and a second conductive semiconductor layer on the blocking layer, wherein the active layer comprises a plurality of quantum well layers and quantum barrier layers, and the quantum well layer is formed from InxGaYNInxGayN (0.11≦x≦0.14, 0

摘要翻译： 根据本发明的一个实施例的发光器件包括：第一导电半导体层; 在第一导电半导体层上的有源层; 活性层上的阻挡层; 以及在所述阻挡层上的第二导电半导体层，其中所述有源层包括多个量子阱层和量子势垒层，并且所述量子阱层由In x Ga y N In x Ga y N（0.11＆lt; x 1; x＆n l E; 0.14,0