公开(公告)号：US20230069728A1

公开(公告)日：2023-03-02

申请号：US17799824

申请日：2020-02-13

Applicant: LG ELECTRONICS INC.

Inventor： Jeomoh KIM ,  Wonyong LEE ,  Sukkoo JUNG

IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/30 ,  H01L33/00

Abstract: Discussed is a display device and a method for manufacturing the display device, and more particularly, to a display device using a semiconductor light emitting element having a size of several μm to several tens of μm, and a method for manufacturing the display device. The display device can include a board including a wiring electrode; and a plurality of semiconductor light emitting diodes electrically connected to the wiring electrode. Each of the plurality of semiconductor light emitting diodes an include a first conductivity type semiconductor layer, an active layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the active layer. The first conductivity type semiconductor layer can include a plurality of recessed portions.

公开(公告)号：US20230078258A1

公开(公告)日：2023-03-16

申请号：US17799817

申请日：2020-02-17

Applicant: LG ELECTRONICS INC.

Inventor： Wonyong LEE ,  Jeomoh KIM

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/62 ,  H01L33/00

Abstract: Discussed is a display device and a method for manufacturing the display device, and particularly, to a display device using a semiconductor light-emitting element having the size of several μm to tens μm. The display device can include a board including a wiring electrode, and a plurality of semiconductor light emitting diodes electrically connected to the wiring electrode. Each of the plurality of semiconductor light emitting diodes includes a plurality of recessed portions formed on a side surface of each light emitting diode.

公开(公告)号：US20220376141A1

公开(公告)日：2022-11-24

申请号：US17770934

申请日：2019-10-23

Applicant: LG ELECTRONICS INC.

Inventor： Jeomoh KIM ,  Younghak CHANG

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/00

Abstract: The present specification provides a red semiconductor light emitting element having no residual bonding layer when a semiconductor light emitting element is selectively transferred or assembled, and a method for manufacturing a display apparatus using same. The method for manufacturing the display apparatus according to an embodiment of the present disclosure comprises the steps of: forming an epitaxial layer for implementing a red semiconductor light emitting element on a growth substrate; transferring the epitaxial layer on the growth substrate onto a first temporary substrate; forming a release layer on the epitaxial layer which has been transferred onto the first temporary substrate; transferring the epitaxial layer, on which the release layer has been formed, onto a second temporary substrate; manufacturing an individual semiconductor light emitting element by etching the epitaxial layer transferred on the second temporary substrate; and separating the semiconductor light emitting element from the second temporary substrate.