公开(公告)号：US20160111565A1

公开(公告)日：2016-04-21

申请号：US14983282

申请日：2015-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Hwa Nyeon KIM ,  Ju Hwan YUN ,  Jong Hwan KIM ,  Bum Sung KIM ,  II Hyoung JUNG ,  Jin Ah KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Abstract translation: 本发明公开了一种背接触太阳能电池。 背接触太阳能电池包括具有前表面和后表面的半导体衬底; 具有第一导电类型的第一导电类型半导体区域和在半导体衬底的后表面上具有间隔的第二导电类型的第二导电类型半导体区域。 此外，半导体衬底的后表面具有在第一导电类型半导体区域和第二导电类型半导体区域之间的间隔处的纹理结构。

公开(公告)号：US20150380575A1

公开(公告)日：2015-12-31

申请号：US14842635

申请日：2015-09-01

Applicant: LG ELECTRONICS INC.

Inventor： Hwa Nyeon KIM ,  Ju Hwan YUN ,  Jong Hwan KIM ,  Bum Sung KIM ,  Il Hyoung JUNG ,  Jin Ah KIM

IPC: H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

Abstract: The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; and a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type, the first conductive type semiconductor region and the second conductive type semiconductor region being disposed with an interval on the rear surface of the semiconductor substrate. In addition, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

Abstract translation: 本发明公开了一种背接触太阳能电池。 背接触太阳能电池包括具有前表面和后表面的半导体衬底; 以及具有第一导电类型的第一导电类型半导体区域和具有第二导电类型的第二导电类型半导体区域，所述第一导电类型半导体区域和所述第二导电类型半导体区域在半导体的后表面上以间隔设置 基质。 此外，半导体衬底的后表面具有在第一导电类型半导体区域和第二导电类型半导体区域之间的间隔处的纹理结构。