WIDE BAND GAP POWER SEMICONDUCTOR SYSTEM AND DRIVING METHOD THEREOF

    公开(公告)号:US20210152158A1

    公开(公告)日:2021-05-20

    申请号:US17092843

    申请日:2020-11-09

    Abstract: This application relates to a wide band gap (WBG) power semiconductor system. In one aspect, the system includes a controller configured to generate a switching control signal and a gate driver configured to receive the switching control signal and generate a switching drive signal in response to the switching control signal. The system also includes a WBG power semiconductor device coupled to the gate driver, comprising a gate terminal for receiving the switching drive signal, and configured to be switched in response to the switching drive signal. The switching drive signal has one of three signal levels: a first voltage level higher than a zero voltage level, a second voltage level lower than the zero voltage level, and the zero voltage level at an arbitrary instant. As a result, the gate driver drives the WBG power semiconductor device with the three voltage levels.

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