公开(公告)号：US11804562B2

公开(公告)日：2023-10-31

申请号：US17454404

申请日：2021-11-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  DaeMyeong Geum ,  SeungYeop Ahn ,  Jinha Lim

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L49/02 ,  H01L27/144

CPC classification number: H01L31/035236 ,  H01L27/1443 ,  H01L28/40 ,  H01L31/0232 ,  H01L31/186

Abstract: Various embodiments relate to a superlattice photodetector and a method of manufacturing the same. The superlattice photodetector includes an absorption layer for absorbing incident light and a waveguide layer coupled with the absorption layer and enabling the incident light to be waveguided within the absorption layer. The waveguide layer may include a periodic structure in which a plurality of metal patterns and a plurality of dielectric patterns are repeatedly arranged. According to various embodiments, the superlattice photodetector can be thinned while having improved performance.