Integrated plasmonic circuit and method of manufacturing the same
    1.
    发明授权
    Integrated plasmonic circuit and method of manufacturing the same 有权
    集成等离子体电路及其制造方法

    公开(公告)号:US09583650B1

    公开(公告)日:2017-02-28

    申请号:US15052305

    申请日:2016-02-24

    Abstract: Provided are a integrated plasmonic circuit including a plasmonic source using a surface plasmon resonance phenomenon, a plasmonic detector detecting an optical signal generated in the plasmonic source, and a link structure between the plasmonic source and the plasmonic detector, that is, a signal transferring part, and a method of manufacturing the same. Provided are a integrated plasmonic circuit capable of realizing both of miniaturization and speed improvement by overcoming both of a limitation of an electronic device in terms of a signal speed in spite of being excellent in terms of miniaturization efficiency and a limitation of an existing optical device in terms of miniaturization due to a diffraction limitation of light in spite of being improved in terms of a signal speed, and a method of manufacturing the same.

    Abstract translation: 提供了一种包括使用表面等离子体共振现象的等离激元源的等离子体激元电路,等离子体激元源中产生的光信号的等离子体检测器以及等离激元源和等离子体激元检测器之间的链接结构,即信号传递部分 ,及其制造方法。 提供了一种集成等离子体电路,其能够尽可能优越的小型化效率和现有的光学装置的限制,克服了电子设备在信号速度方面的限制,而实现了小型化和速度改善两者 尽管在信号速度方面得到改善,但是由于光的衍射限制引起的小型化的术语及其制造方法。

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