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    SELF-GENERATION SENSOR DEVICE AND SELF-GENERATION SENSOR SYSTEM USING THE SAME
    2.
    发明申请
    SELF-GENERATION SENSOR DEVICE AND SELF-GENERATION SENSOR SYSTEM USING THE SAME 审中-公开

    公开(公告)号：US20190081223A1

    公开(公告)日：2019-03-14

    申请号：US16083460

    申请日：2018-03-13

    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY ,  TEGWAY CO., LTD.

    Inventor： Byung Jin CHO ,  Yongjun KIM ,  Choong Sun KIM ,  Kyoung Soo YI

    IPC: H01L35/04 ,  H01L35/24

    Abstract: A self-generation sensor device and a self-generation sensor system using the same are disclosed. According to one embodiment, the self-generation sensor device may include: a sensor unit; a communication unit configured to transmit data reflecting a sensed value of the sensor unit; and a thermal power generation module including a pair of main surfaces including a high-temperature surface thermally connected to the high-temperature object and a low-temperature surface which is a surface opposite to the high-temperature surface, a thermoelectric module including a plurality of thermoelectric elements disposed between the pair of main surfaces and producing the power by using a temperature difference between the both main surfaces due to the high-temperature object, and a support member filled in a space between the both main surfaces to support the thermoelectric elements, and a heat dissipation member connected to the low-temperature surface.

    CAPACITOR FOR DYNAMIC RANDOM ACCESS MEMORY, DRAM INCLUDING THE SAME AND METHODS OF FABRICATING THEREOF
    3.
    发明申请
    CAPACITOR FOR DYNAMIC RANDOM ACCESS MEMORY, DRAM INCLUDING THE SAME AND METHODS OF FABRICATING THEREOF 有权

    公开(公告)号：US20220246716A1

    公开(公告)日：2022-08-04

    申请号：US17591381

    申请日：2022-02-02

    Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

    Inventor： Hyunsoo JIN ,  Byung Jin CHO ,  Seongho KIM

    IPC: H01L49/02 ,  H01L27/108 ,  H01G4/10

    Abstract: Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.

    FLEXIBLE THERMOELECTRIC SYSTEM
    6.
    发明申请
    FLEXIBLE THERMOELECTRIC SYSTEM 审中-公开

    公开(公告)号：US20170358726A1

    公开(公告)日：2017-12-14

    申请号：US15617223

    申请日：2017-06-08

    Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Woochul KIM ,  Dong Gyu KIM ,  Byung Jin CHO

    IPC: H01L35/30 ,  H01L35/32

    CPC classification number: H01L35/30 ,  H01L35/32

    Abstract: Disclosed is a flexible thermoelectric system. More particularly, the flexible thermoelectric system includes thermoelectric units that are wearable on the human body; a heating unit that is provided on one side of the thermoelectric units so as to be disposed between the thermoelectric units and the skin and is formed of a hygroscopic and exothermic material; and a heat dissipating unit that is provided on other side of the thermoelectric units such that the heat dissipating unit faces the heating unit and the thermoelectric units are disposed between the heat dissipating unit and the heating unit; wherein the heating unit and the heat dissipating unit are flexible. Due to such a configuration, the flexible thermoelectric system may be flexibly attached to the skin and temperature difference between upper and lower surfaces of the thermoelectric units may be maximized. Accordingly, power generation or cooling performance may be improved.

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