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1.发明申请Predicting and Controlling Critical Dimension Issues and Pattern Defectivity in Wafers Using Interferometry 有权使用干涉测量法预测和控制晶片中的关键尺寸问题和图案缺陷公开(公告)号：US20160163033A1
公开(公告)日：2016-06-09
申请号：US14730997
申请日：2015-06-04
Applicant: KLA-Tencor Corporation
Inventor： Pradeep Vukkadala , Sathish Veeraraghavan , Soham Dey , Jaydeep Sinha
CPC classification number: G06T7/0004 , G06K9/6201 , G06T7/001 , G06T2207/10004 , G06T2207/30148 , H01L22/12 , H01L22/20
Abstract: Systems and methods for predicting and controlling pattern quality data (e.g., critical dimension and/or pattern defectivity) in patterned wafers using patterned wafer geometry (PWG) measurements are disclosed. Correlations between PWG measurements and pattern quality data measurements may be established, and the established correlations may be utilized to provide pattern quality data predictions for a given wafer based on geometry measurements obtained for the give wafer. The predictions produced may be provided to a lithography tool, which may utilize the predictions to correct focus and/or title errors that may occur during the lithography process.
Abstract translation: 公开了使用图案化晶片几何（PWG）测量在图案化晶片中预测和控制图案质量数据（例如临界尺寸和/或图案缺陷率）的系统和方法。 可以建立PWG测量和模式质量数据测量之间的相关性，并且可以利用所建立的相关性来基于为给定晶片获得的几何测量来为给定晶片提供图案质量数据预测。 可以将所产生的预测提供给光刻工具，光刻工具可以利用预测来校正可能在光刻工艺期间发生的焦点和/或标题误差。
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2.发明授权Predicting and controlling critical dimension issues and pattern defectivity in wafers using interferometry 有权使用干涉测量预测和控制晶片中的关键尺寸问题和图案缺陷公开(公告)号：US09558545B2
公开(公告)日：2017-01-31
申请号：US14730997
申请日：2015-06-04
Applicant: KLA-Tencor Corporation
Inventor： Pradeep Vukkadala , Sathish Veeraraghavan , Soham Dey , Jaydeep Sinha
CPC classification number: G06T7/0004 , G06K9/6201 , G06T7/001 , G06T2207/10004 , G06T2207/30148 , H01L22/12 , H01L22/20
Abstract: Systems and methods for predicting and controlling pattern quality data (e.g., critical dimension and/or pattern defectivity) in patterned wafers using patterned wafer geometry (PWG) measurements are disclosed. Correlations between PWG measurements and pattern quality data measurements may be established, and the established correlations may be utilized to provide pattern quality data predictions for a given wafer based on geometry measurements obtained for the give wafer. The predictions produced may be provided to a lithography tool, which may utilize the predictions to correct focus and/or title errors that may occur during the lithography process.
Abstract translation: 公开了使用图案化晶片几何（PWG）测量在图案化晶片中预测和控制图案质量数据（例如临界尺寸和/或图案缺陷率）的系统和方法。 可以建立PWG测量和模式质量数据测量之间的相关性，并且可以利用所建立的相关性来基于为给定晶片获得的几何测量来为给定晶片提供图案质量数据预测。 可以将所产生的预测提供给光刻工具，光刻工具可以利用预测来校正可能在光刻工艺期间发生的焦点和/或标题误差。
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