公开(公告)号：US20170060001A1

公开(公告)日：2017-03-02

申请号：US15351995

申请日：2016-11-15

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Inna Tarshish-Shapir ,  Jeremy (Shi-Ming) Wei ,  Mark Ghinovker

IPC: G03F7/20 ,  G06F17/50

Abstract: Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

Abstract translation: 提供计量目标设计方法和验证目标。 方法包括使用与设计的计量目标相关的OCD数据作为目标模型与晶片上的相应实际目标之间的差异的估计，以及调整度量目标设计模型以补偿估计的差异。 专用的验证目标可以包括覆盖目标特征，并且被尺寸优化以由OCD传感器测量，以便能够补偿由生产过程变化导致的不准确性。 方法还包括修改制造商和计量供应商之间的工作流程，从而提供更高保真度量的目标设计模型，并最终提高计量测量的精度。

公开(公告)号：US20140136137A1

公开(公告)日：2014-05-15

申请号：US14152562

申请日：2014-01-10

Applicant: KLA-Tencor Corporation

Inventor： Inna Tarshish-Shapir ,  Yoel Feler ,  Anat Marchelli ,  Berta Dinu ,  Vladimir Levinski ,  Boris Efraty ,  Nuriel Amir ,  Mark Ghinovker ,  Amnon Manassen ,  Sigalit Robinzon

IPC: G01R31/28

CPC classification number: G06K9/522 ,  G01B2210/56 ,  G01N21/4788 ,  G06T7/0004 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/30

Abstract: Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.

Abstract translation: 提供了方法和系统，其使用选定的度量来识别指定的计量目标异常，并在几何上对所识别的目标异常进行分类，以将它们链接到相应的误差源。 可以通过从晶片上的相应目标导出来自指定感兴趣区域（ROI）的目标信号（例如来自目标信号的内核）来执行识别，使用各自的功能从目标信号计算度量，并分析用于表征目标的度量。

公开(公告)号：US11137692B2

公开(公告)日：2021-10-05

申请号：US16313972

申请日：2018-11-29

Applicant: KLA-TENCOR CORPORATION

Inventor： Yoel Feler ,  Mark Ghinovker ,  Alexander Svizher ,  Vladimir Levinski ,  Inna Tarshish-Shapir

IPC: G03F7/20 ,  G03F9/00

Abstract: Metrology targets, design methods and measurement methods thereof are provided with periodic structure(s) which are oblique with respect to orthogonal production axes X and Y of the lithography tool—enabling more accurate overlay measurements of devices having diagonal (oblique, tilted) elements such as DRAM devices. One or more oblique periodic structure(s) may be used to provide one- or two-dimensional signals, with respect to one or more layers, possibly providing overlay measurements for multiple steps applied to one layer. The oblique periodic structure(s) may be used to modify current metrology target designs (e.g., imaging targets and/or scatterometry targets) or to design new targets, and measurement algorithms may be adjusted respectively to derive signals from the oblique periodic structure(s) and/or to provide pre-processed images thereof. The disclosed targets are process compatible and reflect more accurately the device overlays with respect to various process steps.

公开(公告)号：US10705434B2

公开(公告)日：2020-07-07

申请号：US15351995

申请日：2016-11-15

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Inna Tarshish-Shapir ,  Jeremy (Shi-Ming) Wei ,  Mark Ghinovker

IPC: G06F17/50 ,  G03F7/20 ,  H01L21/66 ,  G06F30/00

Abstract: Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measurable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enabled higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

公开(公告)号：US10242290B2

公开(公告)日：2019-03-26

申请号：US14152562

申请日：2014-01-10

Applicant: KLA-Tencor Corporation

Inventor： Inna Tarshish-Shapir ,  Yoel Feler ,  Anat Marchelli ,  Berta Dinu ,  Vladimir Levinski ,  Boris Efraty ,  Nuriel Amir ,  Mark Ghinovker ,  Amnon Manassen ,  Sigalit Robinzon

IPC: G01R31/28 ,  G06K9/52 ,  G06T7/00 ,  H01L21/66 ,  G01N21/47

Abstract: Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.