X-Ray Scatterometry Based Measurements Of Memory Array Structures Stacked With Complex Logic Structures

    公开(公告)号:US20240302301A1

    公开(公告)日:2024-09-12

    申请号:US18416113

    申请日:2024-01-18

    申请人: KLA Corporation

    摘要: Methods and systems for performing measurements of stacked semiconductor structures, e.g., stacked memory and logic structures, based on X-Ray transmission scatterometry measurement data are described herein. In some examples, the scattering response of logic structures is modelled directly in signal space by a mathematical expression including a relatively small number of weighted basis functions. The scattering response of the logic structures and the scattering response of the memory structures determined by an electromagnetic response model are combined, e.g., by summation or convolution. The combined modelled signals are compared to the measured signals at the detector to generate an error signal. The error signal is employed to drive a regression analysis employed to optimize parameter values characterizing the memory structures, values of the weighting coefficients of the signal space model, or both. In other examples, the scattering response of the logic structures is known, and a model is not needed.