公开(公告)号：US11384255B2

公开(公告)日：2022-07-12

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won Yang ,  Jun Ha Hwang ,  Jung Yoon Kim ,  Kwang Soo Park

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US12247141B2

公开(公告)日：2025-03-11

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun Choi ,  Jung Yoon Kim ,  Hae Won Yang ,  Soo Wan Choi

IPC: C09G1/02 ,  C09G1/04 ,  B82Y40/00 ,  H01L21/304

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US12031062B2

公开(公告)日：2024-07-09

申请号：US17415703

申请日：2019-07-11

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon Kim ,  Jun Ha Hwang ,  Kwang Soo Park ,  Hae Won Yang

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.