公开(公告)号：US20170170069A1

公开(公告)日：2017-06-15

申请号：US15131704

申请日：2016-04-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Satoshi WAKATSUKI ,  Hiroshi NAKAZAWA ,  Atsuko SAKATA

IPC: H01L21/768

CPC classification number: H01L21/76897 ,  H01L21/7682 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53271 ,  H01L27/1157 ,  H01L27/11582

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a silicon film on an upper surface side, a lower surface side, and a side surface side of an air gap, while leaving part of the air gap between the silicon film formed on the upper surface side and the silicon film formed on the lower surface side. The method includes forming a metal film on a side surface of the slit. The method includes forming a plurality of metal silicide layers between the second layers by causing reaction between the metal film and the silicon film. The method includes removing unreacted part of the metal film formed on the side surface of the slit.