公开(公告)号：US20160071857A1

公开(公告)日：2016-03-10

申请号：US14657174

申请日：2015-03-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Nobuhito KUGE ,  Hiroshi Akahori

IPC: H01L27/115 ,  H01L21/311

CPC classification number: H01L27/11524

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes: forming memory cells and select transistors on a semiconductor substrate configured to select any memory cell, forming a first insulating nitride film, forming a contact, and selectively removing the first insulating nitride film. The first insulating nitride film is formed so as to cover the semiconductor substrate between the select transistors adjacent in the first direction, the select transistors, and the memory cells. The first insulating nitride film is selectively removed in a region other than the region in which the contact is formed and in a region above the select transistors or the memory cells.

Abstract translation: 根据实施例，半导体器件的制造方法包括：在半导体衬底上形成存储单元和选择晶体管，其被配置为选择任何存储单元，形成第一绝缘氮化物膜，形成接触，以及选择性地去除第一绝缘氮化物 电影。 第一绝缘氮化物膜被形成为覆盖在第一方向相邻的选择晶体管，选择晶体管和存储单元之间的半导体衬底。 在除了形成接触的区域之外的区域中以及在选择晶体管或存储单元上方的区域中选择性地去除第一绝缘氮化物膜。

公开(公告)号：US09269718B1

公开(公告)日：2016-02-23

申请号：US14657174

申请日：2015-03-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Nobuhito Kuge ,  Hiroshi Akahori

IPC: H01L21/8234 ,  H01L27/115 ,  H01L21/311

CPC classification number: H01L27/11524

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes: forming memory cells and select transistors on a semiconductor substrate configured to select any memory cell, forming a first insulating nitride film, forming a contact, and selectively removing the first insulating nitride film. The first insulating nitride film is formed so as to cover the semiconductor substrate between the select transistors adjacent in the first direction, the select transistors, and the memory cells. The first insulating nitride film is selectively removed in a region other than the region in which the contact is formed and in a region above the select transistors or the memory cells.

Abstract translation: 根据实施例，半导体器件的制造方法包括：在半导体衬底上形成存储单元和选择晶体管，其被配置为选择任何存储单元，形成第一绝缘氮化物膜，形成接触，以及选择性地去除第一绝缘氮化物 电影。 第一绝缘氮化物膜被形成为覆盖在第一方向相邻的选择晶体管，选择晶体管和存储单元之间的半导体衬底。 在除了形成接触的区域之外的区域中以及在选择晶体管或存储单元上方的区域中选择性地去除第一绝缘氮化物膜。