摘要:
A light emitting device includes a first power node and a second power node configured to receive single-phase voltage provided from an AC voltage source, a first light emitting unit including at least one light emitting diode (LED), wherein a first end of the first light emitting unit is coupled to the first power node, a second light emitting unit including at least one LED, wherein a first end of the second light emitting unit is coupled to the first power node, and a second end of the second light emitting unit couples to the second power node, and a first phase modulator coupled between a second end of the first light emitting unit and the second power node and configured to change the phase of the single-phase voltage provided to the first light emitting unit.
摘要:
The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.
摘要:
A method of improving efficiency of solar cells made of crystalline silicon, including monocrystalline silicon, multicrystalline silicon and polycrystalline silicon is provided. In the method, a negative bias pulse is applied to solar cells at a predetermined voltage, a predetermined frequency, and a predetermined pulse width while immersing the solar cells in a hydrogen plasma. Hydrogen ions are attracted and quickly implanted into the solar cells. Thus, the passivation of crystal defects in the solar cells can be realized in a short period. Meanwhile, the properties of an antireflection layer cannot be damaged as proper operating parameters are used. Consequently, the serious resistance of the solar cells can be significantly reduced and the filling factor increases as a result. Further, the short-circuit current and the open-circuit voltage can be increased. Therefore, the efficiency can be enhanced.
摘要:
A plasma generator is composed of a surface wave resonant cavity and a vacuum cavity. A microwave energy is introduced into the surface wave resonant cavity via a couple hole of the surface wave resonant cavity, thereby causing the surface wave resonant cavity to resonate to bring about an electromagnetic surface wave, which is then guided into the vacuum cavity via a large area quartz or ceramic couple window located at the top of the vacuum cavity, so as to result in the production of a large area planarized plasma by a low pressure gas contained in the vacuum cavity.
摘要:
A device utilizes a plasma for a liquid crystal alignment. The alignment is processed in a vacuum chamber in a simple way. A general chemical vapor deposition is coordinated to reduce cost. The present invention is a novel contactless process avoiding particle contamination, residual static charge and scratch. And multiple are as of the present invention can be used for alignment.
摘要:
A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.
摘要:
A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.