公开(公告)号：US20090085159A1

公开(公告)日：2009-04-02

申请号：US12127340

申请日：2008-05-27

申请人： Jong Kuk KIM ,  Seung Bum Kim

发明人： Jong Kuk KIM ,  Seung Bum Kim

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括连接到形成在半导体衬底上的接触插塞的圆筒型底部电极和形成在气缸型底部电极之间的支撑图案，其中底部电极的侧壁的一部分高于支撑图案，而另一部分 的底部电极的侧壁比支撑图案低。

公开(公告)号：US20100213617A1

公开(公告)日：2010-08-26

申请号：US12763760

申请日：2010-04-20

申请人： Jong Kuk KIM ,  Seung Bum KIM

发明人： Jong Kuk KIM ,  Seung Bum KIM

IPC分类号： H01L23/48

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括连接到形成在半导体衬底上的接触插塞的圆筒型底部电极和形成在气缸型底部电极之间的支撑图案，其中底部电极的侧壁的一部分高于支撑图案，而另一部分 的底部电极的侧壁比支撑图案低。

公开(公告)号：US20090206448A1

公开(公告)日：2009-08-20

申请号：US12244115

申请日：2008-10-02

申请人： Ho Jin CHO ,  Cheol Hwan PARK ,  Jae Wook SEO ,  Jong Kuk KIM

发明人： Ho Jin CHO ,  Cheol Hwan PARK ,  Jae Wook SEO ,  Jong Kuk KIM

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.

摘要翻译： 当形成具有高电容的电容器时，防止存储节点倾斜的半导体器件包括形成在半导体衬底上的多个圆柱形存储节点; 以及当从顶部观察时，形成为以“L”或“+”的形式固定存储节点的支撑图案。 具有“L”或“+”形式的支撑图案的这种半导体器件随后形成介电层并且防止电容器泄漏的板节点减小了存储节点上的应力。

公开(公告)号：US20080117872A1

公开(公告)日：2008-05-22

申请号：US11940697

申请日：2007-11-15

申请人： Jong Kuk KIM ,  Hyoung Chang Kang ,  Kyoung Bong You

发明人： Jong Kuk KIM ,  Hyoung Chang Kang ,  Kyoung Bong You

IPC分类号： H04Q7/00

CPC分类号： H04L27/2626 ,  H04L25/03012 ,  H04L25/03834

摘要： Embodiments of the present invention may provide an apparatus and a method for transmitting an orthogonal frequency division multiplexing access (OFDMA) symbol in an OFDMA system. A bandwidth limit parameter for generating an OFDMA symbol may be adaptively determined based on the received signal quality of a receiver. An OFDMA symbol may be generated based on the bandwidth limit parameter and transmitted to the receiver. According to embodiments, when the received signal quality of the receiver is bad, the bandwidth limit parameter may be first adjusted before the modulation scheme is changed to have a lower data rate. In such a case, the downlink date rate may be maintained with enhancing the received signal quality of the receiver.

摘要翻译： 本发明的实施例可以提供一种用于在OFDMA系统中发送正交频分复用接入（OFDMA）符号的装置和方法。 可以基于接收机的接收信号质量自适应地确定用于生成OFDMA符号的带宽限制参数。 OFDMA符号可以基于带宽限制参数生成并发送到接收机。 根据实施例，当接收机的接收信号质量不良时，可以在调制方案被改变为具有较低的数据速率之前，首先调整带宽限制参数。 在这种情况下，可以通过增强接收机的接收信号质量来维持下行链路日期速率。