公开(公告)号：US06872281B1

公开(公告)日：2005-03-29

申请号：US09676269

申请日：2000-09-28

申请人： Jian J. Chen ,  Mukund Srinivasan ,  Eric H. Lenz

发明人： Jian J. Chen ,  Mukund Srinivasan ,  Eric H. Lenz

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01J37/32871 ,  H01J37/32082 ,  H01J37/32623

摘要： A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween. Additionally, the plasma confining assembly may include a third confining element, which is formed from an insulating material and disposed between the first confining element and the second confining element, and proximate the periphery of the process region. The third confining element further reduces the effects of plasma forming components that pass between the first confining element and the second confining element.

公开(公告)号：US07094315B2

公开(公告)日：2006-08-22

申请号：US11022396

申请日：2004-12-22

申请人： Jian J. Chen ,  Mukund Srinivasan ,  Eric H. Lenz

发明人： Jian J. Chen ,  Mukund Srinivasan ,  Eric H. Lenz

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32871 ,  H01J37/32082 ,  H01J37/32623

摘要： A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween. Additionally, the plasma confining assembly may include a third confining element, which is formed from an insulating material and disposed between the first confining element and the second confining element, and proximate the periphery of the process region. The third confining element further reduces the effects of plasma forming components that pass between the first confining element and the second confining element.

摘要翻译： 公开了一种用于最小化处理室中的处理区域外的区域中的不需要的等离子体形成的等离子体封闭组件。 等离子体限制组件包括靠近处理区域的周边定位的第一限制元件和第二约束元件。 第二限制元件与第一限制元件间隔开。 第一限制元件包括电接地的暴露的导电表面，并且第二限制元件包括暴露的绝缘表面，其被配置为覆盖电接地的导电部分。 第一限制元件和第二限制元件大大减少了通过它们的等离子体形成部件的影响。 另外，等离子体限制组件可以包括由绝缘材料形成并且设置在第一限制元件和第二限制元件之间以及靠近处理区域的周边的第三限制元件。 第三限制元件进一步降低了在第一限制元件和第二限制元件之间通过的等离子体形成元件的影响。

公开(公告)号：USRE43508E1

公开(公告)日：2012-07-17

申请号：US11196842

申请日：2005-08-04

申请人： Eric H. Lenz

发明人： Eric H. Lenz

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/32642

摘要： A confinement assembly for confining a discharge within an interaction space of a plasma processing apparatus comprising a stack of rings and at least one electrically conductive member. The rings are spaced apart from each other to form slots therebetween and are positioned to surround the interaction space. At least one electrically conductive member electrically couples each ring. The electrically conductive member contacts each ring at least at a point inside of the outer circumference of each ring.

摘要翻译： 一种用于将放电限制在包括一叠环和至少一个导电构件的等离子体处理装置的相互作用空间内的限制组件。 环彼此间隔开以在它们之间形成槽，并且定位成围绕相互作用空间。 至少一个导电构件电耦合每个环。 导电构件至少在每个环的外周的内侧接触每个环。

公开(公告)号：US07524397B2

公开(公告)日：2009-04-28

申请号：US10040326

申请日：2002-01-03

申请人： Fangli Hao ,  Albert R. Ellingboe ,  Eric H. Lenz

发明人： Fangli Hao ,  Albert R. Ellingboe ,  Eric H. Lenz

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/32642

摘要： A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

公开(公告)号：US07455748B2

公开(公告)日：2008-11-25

申请号：US10600191

申请日：2003-06-20

申请人： Douglas L. Keil ,  Lumin Li ,  Eric A. Hudson ,  Reza Sadjadi ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Ji Soo Kim

发明人： Douglas L. Keil ,  Lumin Li ,  Eric A. Hudson ,  Reza Sadjadi ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Ji Soo Kim

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/3266 ,  H01J37/32431 ,  H01J37/32623

摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.

摘要翻译： 提供了一种用于处理衬底的等离子体处理装置。 提供具有室壁的等离子体处理室。 在室壁内提供衬底支撑件。 提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。 提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

公开(公告)号：US6019060A

公开(公告)日：2000-02-01

申请号：US104158

申请日：1998-06-24

申请人： Eric H. Lenz

发明人： Eric H. Lenz

IPC分类号： H01J37/32 ,  C30C2/00

CPC分类号： H01J37/32623 ,  Y10S156/915

摘要： A cam-based arrangement configured to move a confinement ring along a first axis of a plasma processing chamber. The confinement ring is disposed in a plane that is orthogonal to the first axis. The cam-based arrangement includes a cam ring having a plurality of cam regions formed on a first surface of the cam ring. There is further included a plurality of cam followers in rolling contact with the first surface of the cam ring. There is also included a plurality of plungers oriented parallel to the first axis, each of the plurality of plungers being coupled to one of the plurality of cam followers and to the confinement ring, wherein the plurality of plungers move in an orchestrated manner parallel to the first axis as the cam ring is rotated and the plurality of cam followers stay in the rolling contact with the first surface of the cam ring.

摘要翻译： 一种基于凸轮的装置，其构造成沿着等离子体处理室的第一轴线移动限制环。 约束环设置在与第一轴正交的平面中。 凸轮的布置包括凸轮环，凸轮环具有形成在凸轮环的第一表面上的多个凸轮区域。 还包括与凸轮环的第一表面滚动接触的多个凸轮从动件。 还包括多个平行于第一轴定向的柱塞，多个柱塞中的每个柱塞联接到多个凸轮从动件中的一个和限制环，其中多个柱塞以协调的方式平行于 当凸轮环旋转时，第一轴线和多个凸轮从动件与凸轮环的第一表面保持滚动接触。

公开(公告)号：US5472565A

公开(公告)日：1995-12-05

申请号：US153084

申请日：1993-11-17

申请人： Randall S. Mundt ,  David R. Kerr ,  Eric H. Lenz

发明人： Randall S. Mundt ,  David R. Kerr ,  Eric H. Lenz

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  B08B7/00 ,  C23F1/02

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32596

摘要： A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a density of the plasma formed by the electrode. The recess can be formed in a replaceable insert and the electrode can be made from a single crystal of silicon.

摘要翻译： 一种具有前表面的等离子体放电电极，其中心部分包​​括用于排出形成等离子体的反应气体的出口和基本上围绕出口的周边部分。 周边部分具有用于局部增强由电极形成的等离子体的密度的至少一个凹部。 凹槽可以形成在可替换的插入件中，并且电极可以由单晶硅制成。

公开(公告)号：US08703249B2

公开(公告)日：2014-04-22

申请号：US11201939

申请日：2005-08-10

申请人： Jose Tong ,  Eric H. Lenz

发明人： Jose Tong ,  Eric H. Lenz

IPC分类号： H05H1/24

CPC分类号： H01J37/32082 ,  H01L21/67069 ,  H01L21/68721

摘要： A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure.

摘要翻译： 公开了一种构造成耦合到等离子体处理室的室结构的夹紧环。 夹紧环具有用于容纳多个紧固件的多个孔。 夹紧环包括围绕夹紧环的外周设置的多个凸缘，多个凸缘的相邻凸缘被设置成使得设置在相邻凸缘之间的多个孔的孔距离相邻的凸缘大致等距离 法兰。 多个凸缘构造成与室结构配合。 夹紧环和凸缘的尺寸使得当多个凸缘与室结构配合时，相邻的凸缘之间的凹槽在夹紧环和室结构之间形成间隙。

公开(公告)号：US08562272B2

公开(公告)日：2013-10-22

申请号：US12706397

申请日：2010-02-16

申请人： Eric H. Lenz

发明人： Eric H. Lenz

IPC分类号： B25J11/00 ,  B25J9/04 ,  H01L21/677

CPC分类号： H01L21/67196 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67778

摘要： In various exemplary embodiments described herein, a system includes a plurality of carrier arms each having concentrically mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner. A linear wafer transport mechanism moves wafers to or from select ones of the wafer carriers on the plurality of carrier arms to an easy handoff location for a load/unload robot.

摘要翻译： 在本文描述的各种示例性实施例中，系统包括多个承载臂，每个承载臂在承载臂的相对端之间具有同心安装的中点，其中晶片载体安装在承载臂的每个相对端上。 集线器包括多个同心安装的驱动器，其中多个驱动器中的每一个驱动器在多个承载臂中的相应一个的臂的中点附近耦合。 多个驱动器中的每一个被配置为独立于剩余的多个同心安装的驱动器被控制。 相应的电动机联接到每个同心安装的驱动器并且被配置成以旋转方式移动联接的行星架臂。 线性晶片传送机构将晶片移动到多个载体臂上的或从选定的晶片载体上移动到用于装载/卸载机器人的简单的切换位置。

公开(公告)号：US08080760B2

公开(公告)日：2011-12-20

申请号：US12693066

申请日：2010-01-25

申请人： Rajinder Dhindsa ,  Eric H. Lenz ,  Andy W. DeSepte ,  Lumin Li

发明人： Rajinder Dhindsa ,  Eric H. Lenz ,  Andy W. DeSepte ,  Lumin Li

IPC分类号： B23K10/00

CPC分类号： H01J37/32568 ,  H01J37/32091

摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

摘要翻译： 等离子体处理室包括构造成中和大气负荷的悬臂组件。 该室包括围绕内部区域并具有形成在其中的开口的壁。 悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。 悬臂组件延伸穿过开口，使得一部分位于室外。 所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。