公开(公告)号：US12021160B2

公开(公告)日：2024-06-25

申请号：US17439307

申请日：2019-12-05

申请人： JX METALS CORPORATION

发明人： Koji Murakami ,  Akira Noda ,  Ryuichi Hirano

IPC分类号： H01L31/0296 ,  C30B11/02 ,  C30B29/48 ,  C30B33/02 ,  G01T1/24 ,  H01L27/144

CPC分类号： H01L31/02966 ,  C30B11/02 ,  C30B29/48 ,  C30B33/02 ,  G01T1/247 ,  H01L27/1446

摘要： Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0×107 Ωcm or more and 7.0×108 Ωcm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.

公开(公告)号：US11967659B2

公开(公告)日：2024-04-23

申请号：US17439207

申请日：2019-12-05

申请人： JX METALS CORPORATION

发明人： Koji Murakami ,  Akira Noda ,  Ryuichi Hirano

IPC分类号： H01L31/0296 ,  H01L27/146 ,  H01L31/08 ,  H01L31/18 ,  C30B29/48

CPC分类号： H01L31/02966 ,  H01L27/14658 ,  H01L31/085 ,  H01L31/1832 ,  C30B29/48

摘要： Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×107 Ωcm or more and 1.0×108 Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.