公开(公告)号：US20110212613A1

公开(公告)日：2011-09-01

申请号：US12912139

申请日：2010-10-26

Applicant: JEONG-KYU KIM ,  KUN-GU LEE

Inventor： JEONG-KYU KIM ,  KUN-GU LEE

IPC: H01L21/768

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device and methods of cutting a fuse of a semiconductor device are provided, the semiconductor device includes a semiconductor substrate that includes a fuse region, a plurality of fuse patterns disposed in the fuse region of the semiconductor substrate, and an insulating layer that insulates the fuse patterns from the semiconductor substrate. The fuse patterns each include a fuse. The fuse patterns are linked to the semiconductor substrate.

Abstract translation: 提供半导体器件和切割半导体器件的熔丝的方法，半导体器件包括半导体衬底，其包括熔丝区域，设置在半导体衬底的熔丝区域中的多个熔丝图案，以及绝缘层， 来自半导体衬底的熔丝图案。 保险丝图案各自包括保险丝。 熔丝图案连接到半导体衬底。