公开(公告)号：US20200381250A1

公开(公告)日：2020-12-03

申请号：US16424830

申请日：2019-05-29

Applicant: International Business Machines Corporation

Inventor： Hiroyuki MIYAZOE ,  Cheng-Wei CHENG ,  Sanghoon LEE

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40

Abstract: A method for forming a semiconductor device comprises receiving a substrate with a silicon oxide layer formed over the substrate and a nano-wire based semiconductor device formed using template-assisted-selective epitaxy (TASE) over the silicon oxide layer. The semiconductor device serves as a seed layer to form at least one i) silicon nanowire which extends laterally in the semiconductor device and over the silicon oxide layer, ii) tunnel which extends laterally in the semiconductor device and over the silicon oxide layer, and iii) nuclei on the silicon oxide layer. A film is deposited over the semiconductor device and the silicon oxide layer. The film is removed over silicon oxide layer outside the semiconductor device. Next the nuclei on the silicon oxide layer are removed. Finally, the silicon oxide layer over the semiconductor device is removed.