公开(公告)号：US11906777B2

公开(公告)日：2024-02-20

申请号：US16797657

申请日：2020-02-21

Applicant: Intel Corporation

Inventor： John Heck ,  Lina He ,  Sungbong Park ,  Olufemi Isiade Dosunmu ,  Harel Frish ,  Kelly Christopher Magruder ,  Seth M. Slavin ,  Wei Qian ,  Ansheng Liu ,  Nutan Gautam ,  Mark Isenberger

IPC: G02B6/12 ,  H04J14/02 ,  G02B6/122

CPC classification number: G02B6/12007 ,  G02B6/12004 ,  G02B6/1228 ,  H04J14/02 ,  G02B2006/12061

Abstract: Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

公开(公告)号：US11029205B2

公开(公告)日：2021-06-08

申请号：US16513457

申请日：2019-07-16

Applicant: Intel Corporation

Inventor： Sungbong Park ,  Ansheng Liu

IPC: G01J1/46 ,  H01L27/06 ,  H01L49/02 ,  G01J1/44

Abstract: Embodiments described herein relate to techniques and configurations associated with a photonic apparatus (e.g., PIC) having a photodiode and a bypass capacitor disposed in a channel. In one instance, the apparatus includes a substrate in which at least first and second channels are formed. The first channel includes a first photodiode and a first capacitor coupled to the first photodiode, and the second channel includes a second photodiode and a second capacitor coupled with the second photodiode. The first and second capacitors are provided to assist with biasing the first and second photodiodes respectively and to isolate a signal output by the first and second photodiodes from interference provided by the power supply associated with the apparatus. Additional embodiments can be described and claimed.

公开(公告)号：US20190339122A1

公开(公告)日：2019-11-07

申请号：US16513457

申请日：2019-07-16

Applicant: Intel Corporation

Inventor： Sungbong Park ,  Ansheng Liu

IPC: G01J1/46 ,  H01L49/02 ,  H01L27/06

Abstract: Embodiments described herein relate to techniques and configurations associated with a photonic apparatus (e.g., PIC) having a photodiode and a bypass capacitor disposed in a channel. In one instance, the apparatus includes a substrate in which at least first and second channels are formed. The first channel includes a first photodiode and a first capacitor coupled to the first photodiode, and the second channel includes a second photodiode and a second capacitor coupled with the second photodiode. The first and second capacitors are provided to assist with biasing the first and second photodiodes respectively and to isolate a signal output by the first and second photodiodes from interference provided by the power supply associated with the apparatus. Additional embodiments can be described and claimed.

公开(公告)号：US12057386B2

公开(公告)日：2024-08-06

申请号：US17024507

申请日：2020-09-17

Applicant: Intel Corporation

Inventor： Wei Qian ,  Cung Tran ,  Sungbong Park ,  John Heck ,  Mark Isenberger ,  Seth Slavin ,  Mengyuan Huang ,  Kelly Magruder ,  Harel Frish ,  Reece Defrees ,  Zhi Li

IPC: H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L23/528

Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.