公开(公告)号：US20230069054A1

公开(公告)日：2023-03-02

申请号：US17410257

申请日：2021-08-24

申请人： Intel Corporation

发明人： Souvik GHOSH ,  Han Wui THEN ,  Pratik KOIRALA ,  Tushar TALUKDAR ,  Paul NORDEEN ,  Nityan NAIR ,  Marko RADOSAVLJEVIC ,  Ibrahim BAN ,  Kimin JUN ,  Jay GUPTA ,  Paul B. FISCHER ,  Nicole K. THOMAS ,  Thomas HOFF ,  Samuel James BADER

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/66

摘要： Gallium nitride (GaN) integrated circuit technology with multi-layer epitaxy and layer transfer is described. In an example, an integrated circuit structure includes a first channel structure including a plurality of alternating first channel layers and second channel layers, the first channel layers including gallium and nitrogen, and the second layers including gallium, aluminum and nitrogen. A second channel structure is bonded to the first channel structure. The second channel structure includes a plurality of alternating third channel layers and fourth channel layers, the third channel layers including gallium and nitrogen, and the fourth layers including gallium, aluminum and nitrogen.

公开(公告)号：US20230054719A1

公开(公告)日：2023-02-23

申请号：US17408025

申请日：2021-08-20

申请人： Intel Corporation

发明人： Pratik KOIRALA ,  Souvik GHOSH ,  Paul NORDEEN ,  Tushar TALUKDAR ,  Thomas HOFF ,  Ibrahim BAN ,  Kimin JUN ,  Samuel James BADER ,  Marko RADOSAVLJEVIC ,  Nicole K. THOMAS ,  Paul B. FISCHER ,  Han Wui THEN

IPC分类号： H01L29/778 ,  H01L29/20

摘要： Gallium nitride (GaN) layer transfer and regrowth for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate. An insulator layer is over the substrate. A device layer is directly on the insulator layer. The device layer has a thickness of less than approximately 500 nanometers.