公开(公告)号：US20230086920A1

公开(公告)日：2023-03-23

申请号：US17481245

申请日：2021-09-21

申请人： Intel Corporation

发明人： Liang HE ,  Jisu JIANG ,  Jung Kyu HAN ,  Gang DUAN ,  Yosuke KANAOKA ,  Jason M. GAMBA ,  Bai NIE ,  Robert Alan MAY ,  Kimberly A. DEVINE ,  Mitchell ARMSTRONG ,  Yue DENG

IPC分类号： H01L23/31 ,  H01L23/22

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques for a dam structure on a substrate that is proximate to a die coupled with the substrate, where the dam decreases the risk of die shift during encapsulation material flow over the die during the manufacturing process. The dam structure may fully encircle the die. During encapsulation material flow, the dam structure creates a cavity that moderates the different flow rates of material that otherwise would exert different pressures the sides of the die and cause to die to shift its position on the substrate. Other embodiments may be described and/or claimed.