公开(公告)号：US20190319161A1

公开(公告)日：2019-10-17

申请号：US16317135

申请日：2017-06-22

申请人： Institutt for Energiteknikk ,  Universidad Complutense de Madrid

发明人： Ana CREMADES RODRIGUEZ ,  Chang Chuan YOU ,  David MAESTRE VAREA ,  Erik STENSRUD MARSTEIN ,  Geraldo Cristian VASQUEZ VILLANUEVA ,  Halvard HAUG ,  Javier PIQUERES DE NORIEGA ,  Jose Maria GONZALEZ CALBET ,  Julio RAMIREZ CASTELLANOS ,  Maria TAENO GONZALEZ ,  Miguel GARCIA TECEDOR ,  Smagul KARAZHANOV

IPC分类号： H01L31/18 ,  H01L31/04 ,  C09D5/24 ,  C09D165/00 ,  C09D7/40 ,  C09D7/61 ,  C09D7/45

摘要： A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.