公开(公告)号：US20240005064A1

公开(公告)日：2024-01-04

申请号：US18255045

申请日：2021-11-01

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Lihong Liu ,  Yayi Wei ,  Huwen Ding

IPC: G06F30/23 ,  G03F7/00 ,  G06F17/16

CPC classification number: G06F30/23 ,  G03F7/70433 ,  G06F17/16 ,  G06F2111/14

Abstract: Provided is a method for optimizing a lithography quality, including: determining a wave function stray term introduced by a surface roughness of a metal film layer based on Eigen matrix method and Bloch theorem; inputting the wave function stray term into a lithography quality deviation mathematical model for calculation and simulation to obtain an influence analysis curve of a roughness of the metal film layer on a lithography quality, the influence analysis curve characterizes an influence result of the roughness of the metal film layer on the lithography quality; reducing the surface roughness of the metal film layer and/or providing a metal-dielectric multilayer film structure between a mask above a metal-dielectric unit and air according to the influence result, so as to optimize the lithography quality of the metal-dielectric unit. Provided is an apparatus for optimizing a lithography quality, an electronic device, a computer-readable storage medium and computer program product.