公开(公告)号：US20230317542A1

公开(公告)日：2023-10-05

申请号：US18128506

申请日：2023-03-30

申请人： Infineon Technologies AG

发明人： Jochen HILSENBECK ,  Thomas SÖLLRADL ,  Roman ROTH ,  Richard GAISBERGER ,  Sophia OLES ,  Helmut Heinrich SCHOENHERR ,  Juergen STEINBRENNER

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L23/3192 ,  H01L23/3171 ,  H01L24/05 ,  H01L21/56 ,  H01L2224/05567 ,  H01L23/291

摘要： A semiconductor device is proposed. The semiconductor device includes a contact pad structure over a first surface of a semiconductor body. The semiconductor device further includes a dielectric structure lining a sidewall and a boundary area on a top surface of the contact pad structure, wherein the dielectric structure includes a dielectric spacer at the sidewall of the contact pad structure.