专利检索 ap:("Infineon Technologies AG") AND inv:"Annette SAENGER" 第 1 页

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发明申请
POWER SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING POWER SEMICONDUCTOR DEVICE 有权

公开(公告)号：US20230082571A1

公开(公告)日：2023-03-16

申请号：US17945494

申请日：2022-09-15

申请人： Infineon Technologies AG

发明人： Jochen HILSENBECK , Thomas SOELLRADL , Roman ROTH , Annette SAENGER , Ulrike FASTNER , Johanna SCHLAMINGER , Joachim HIRSCHLER , Andreas BEHRENDT

IPC分类号： H01L23/00 , H01L23/31

摘要： A power semiconductor device includes a semiconductor body and a first terminal at the semiconductor body. The first terminal has a first side for adjoining an encapsulation and a second side for adjoining the semiconductor body. The first terminal includes, at the first side, a top layer; and, at the second side, a base layer coupled with the top layer, wherein a sidewall of the top layer and/or a sidewall of the base layer is arranged in an angle smaller than 85° with respect to a plane.